A 4 GHz non-resonant clock driver with inductor-assisted energy return to power grid

Power consumption of a multi-GHz local clock driver is reduced by returning energy stored in the clock-tree load capacitance back to the on-chip power-distribution grid. We call this type of return energy recycling. To achieve a nearly square clock waveform, the energy is transferred in a non-resonant way using an on-chip inductor in a configuration resembling a full-bridge DC-DC converter. A zero-voltage switching technique is implemented in the clock driver to reduce dynamic power loss associated with the high switching frequencies. A prototype implemented in 90 nm CMOS shows a power savings of 35% at 4 GHz. The area needed for the inductor in this new clock driver is about 6% of a local clock region. © 2006 IEEE.

Modeling of SFR cores with Serpent-DYN3D codes sequence

DYN3D reactor dynamics nodal diffusion code was originally developed for the analysis of Light Water Reactors. In this paper, we demonstrate the feasibility of using DYN3D for modeling of fast spectrum reactors. A homogenized cross sections data library was generated using continuous energy Monte-Carlo code Serpent which provides significant modeling flexibility compared with traditional deterministic lattice transport codes and tolerable execution time. A representative sodium cooled fast reactor core was modeled with the Serpent-DYN3D code sequence and the results were compared with those produced by ERANOS code and with a 3D full core Monte-Carlo solution. Very good agreement between the codes was observed for the core integral parameters and power distribution suggesting that the DYN3D code with cross section library generated using Serpent can be reliably used for the analysis of fast reactors. © 2012 Elsevier Ltd. All rights reserved.

Use of axially graded burnable boron for hot-spot temperature reduction in a pressurized water reactor core

Shortly after the loading of a pressurized water reactor (PWR) core, the axial power distribution in fresh fuel has already attained the characteristic, almost flat shape, typical of burned fuel. At beginning of cycle (BOC), however, the axial distribution is centrally peaked. In assemblies hosting uniform burnable boron rods, this BOC peaking is even more pronounced. A reduction in the axial peaking is today often achieved by shortening the burnable boron rods by some 30 cm at each edge. It is shown that a two-zone grading of the boron rod leads, in a representative PWR cycle, to a reduction of the hot-spot temperature of approximately 70 °C, compared with the nongraded case. However, with a proper three-zone grading of the boron rod, an additional 20 °C may be cut off the hot-spot temperature. Further, with a slightly skewed application of this three-zone grading, an additional 50 °C may be cut off. The representative PWR cycle studied was cycle 11 of the Indian Point 2 station, with a simplification in the number of fuel types and in the burnup distribution. The analysis was based on a complete three-dimensional burnup calculation. The code system was ELCOS, with BOXER as an assembly code for the generation of burnup-dependent cross sections and SILWER as a three-dimensional core code with thermal-hydraulic feedback.

Influence of voltage and frequency dimming on power losses in HF electronic ballasts for compact fluorescent lamps

Compact Fluorescent Lamps (CFL) incorporating electronic ballasts are widely used in lighting. In many cases the ability to dim the lamp is a requirement Dimming can be achieved by varying the voltage supplied to the inverter or by changing the switching frequency of the inverter. The effect of dimming by both approaches on the power losses in the inverter is studied in this work. The lamp and associated inverter has been modeled in PSPICE, using a behavioral model for the CFL. Predicted losses are in good agreement with experimental data obtained from calorimetry. The model was then used to determine the distribution of losses within the inverter, enabling a comparison of the effects of the two dimming methods to be made. © 2006 IEEE.

Wideband tunable, high-power, graphene mode-locked ultrafast lasers

Ultrafast passively mode-locked lasers with spectral tuning capability and high output power have widespread applications in biomedical research, spectroscopy and telecommunications [1,2]. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs) [2,3]. However, these typically have a narrow tuning range, and require complex fabrication and packaging [2,3]. A simple, cost-effective alternative is to use Single Wall Carbon Nanotubes (SWNTs) [4,10] and Graphene [10,14]. Wide-band operation is possible using SWNTs with a wide diameter distribution [5,10]. However, SWNTs not in resonance are not used and may contribute to unwanted insertion losses [10]. The linear dispersion of the Dirac electrons in graphene offers an ideal solution for wideband ultrafast pulse generation [10,15]. © 2011 IEEE.

Influence of voltage and frequency dimming on power losses in hf electronic ballasts for compact fluorescent lamps

Compact fluorescent lamps (CFLs) incorporating electronic ballasts are widely used in lighting. In many cases, the ability to dim the lamp is a requirement. Dimming can be achieved by varying the switching frequency of the inverter or by changing the voltage supplied to the inverter. The effect of dimming by both approaches on the power losses in the inverter is studied in this work. The lamp and associated inverter has been modeled in Pspice, using a behavioral model for the CFL. Predicted losses are in good agreement with experimental data obtained from calorimetry. After verification, the model was then used to determine the distribution of losses within the inverter, enabling a comparison of the effects of the two dimming methods to be made. © 2011 IEEE.

FPGA, physics-based modeling of IGBT and pin diode for hardware co-simulation of complex power electronic converters and systems

This paper presents the steps and the challenges for implementing analytical, physics-based models for the insulated gate bipolar transistor (IGBT) and the PIN diode in hardware and more specifically in field programmable gate arrays (FPGAs). The models can be utilised in hardware co-simulation of complex power electronic converters and entire power systems in order to reduce the simulation time without compromising the accuracy of results. Such a co-simulation allows reliable prediction of the system's performance as well as accurate investigation of the power devices' behaviour during operation. Ultimately, this will allow application-specific optimisation of the devices' structure, circuit topologies as well as enhancement of the control and/or protection schemes.

System studies of the superconducting fault current limiter in electrical distribution grids

A superconducting fault current limiter (SFCL) in series with a downstream circuit breaker could provide a viable solution to controlling fault current levels in electrical distribution networks. In order to integrate the SFCL into power grids, we need a way to conveniently predict the performance of the SFCL in a given scenario. In this paper, short circuit analysis based on the electromagnetic transient program was used to investigate the operational behavior of the SFCL installed in an electrical distribution grid. System studies show that the SFCL can not only limit the fault current to an acceptable value, but also mitigate the voltage sag. The transient recovery voltage (TRV) could be remarkably damped and improved by the presence of the SFCL after the circuit breaker is opened to clear the fault. © 2007 British Crown Copyright.

Modeling bipolar power semiconductor devices gachovska

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. Table of Contents: Introduction to Power Semiconductor Device Modeling/Physics of Power Semiconductor Devices/Modeling of a Power Diode and IGBT/IGBT Under an Inductive Load-Switching Condition in Simulink/Parameter Extraction. © 2013 by Morgan & Claypool.

Quantum key distribution for 10 Gb/s dense wavelength division multiplexing networks

We demonstrate quantum key distribution (QKD) with bidirectional 10 Gb/s classical data channels in a single fiber using dense wavelength division multiplexing. Record secure key rates of 2.38 Mbps and fiber distances up to 70km are achieved. Data channels are simultaneously monitored for error-free operation. The robustness of QKD is further demonstrated with a secure key rate of 445 kbps over 25km, obtained in the presence of data lasers launching conventional 0 dBm power. We discuss the fundamental limit for the QKD performance in the multiplexing environment. © 2014 AIP Publishing LLC.